Applied Materials 30071-0607 Ceramic Gas Nozzle Unit

Applied Materials 30071-0607 HDPCVD ceramic nozzle, high purity ceramic material, precision flow channel, corrosion and high temperature resistant, used for semiconductor HDPCVD process gas distribution and injection.
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Products Description


Applied Materials 30071-0607 Ceramic Gas Nozzle Unit



Module Feature

30071-0607 is Applied Materials (AMAT) HDPCVD chamber ceramic gas nozzle. It is made of high-purity dense ceramic material, with precision machined internal flow passages.

It can withstand high process temperature and corrosive process gas environment, keep stable gas injection distribution uniformity. It is a key consumable inside HDPCVD reaction chamber, directly affects thin film deposition uniformity and wafer yield. Widely used on AMAT HDPCVD semiconductor deposition equipment.

Working principle

Process gas flows through the internal tiny passages of ceramic nozzle, and is evenly injected into CVD reaction chamber.

The nozzle controls gas flow direction and distribution to form stable gas field above wafer surface. Under high temperature plasma environment, gas reacts and deposits thin film on wafer. If nozzle hole is blocked or surface etched, film thickness unevenness and particle defect will occur.

Onboard components

High purity ceramic nozzle body, precision gas orifice channels, external threaded mounting section, sealing matching surface. Sealing gasket is sold separately.

LED indicators

No built-in indicator lamp. Abnormal deposition result and particle alarm are displayed on the equipment host.

Hardware self‑diagnosis

No electronic self-check for nozzle itself. Fault judgment relies on wafer film data, particle test and equipment process deviation alarm.

Programming software

Applied Materials semiconductor equipment recipe software for process monitoring and defect review.

Electrical & Process Parameters

Model:30071-0607 Brand:Applied Materials Device type:HDPCVD Ceramic Gas Nozzle Material:High purity ceramic Working media:Semiconductor process gas Function:Process gas injection and uniform distribution inside HDPCVD chamber

Mechanical & Structure

Mounting:Threaded installation inside CVD chamber gas manifold Protection class:Cleanroom grade Housing:High purity ceramic monolithic nozzle body

Environmental

Operating temperature:High temperature CVD process environment Storage temperature:-40℃ ~ +85℃ Ambient humidity:5~95% non‑condensing Certification:Semiconductor cleanroom industry standard compliant Status:Applied Materials original semiconductor chamber spare

Installation

Take anti-static protection before installation. Clean chamber manifold and nozzle sealing surface.

Screw the nozzle to specified torque, install new sealing gasket. After chamber pump down, perform gas leak test. Regularly inspect nozzle surface for etching and particle accumulation.

Interface

Gas inlet thread port, multi-hole gas injection outlet face, static sealing surface.

Diagnostic

Wafer film uneven: Nozzle partial hole blocked, nozzle surface etching deformation.

Particle defect: Nozzle surface peeling, loose foreign residue.

Gas leakage: Sealing surface scratch or gasket damage.

Product BriefApplied Materials 30071-0607 HDPCVD ceramic nozzle, high purity anti-corrosion ceramic, precision gas distribution, used for AMAT semiconductor HDPCVD chamber thin film deposition process.


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